- 您现在的位置：买卖IC网 > PDF目录36728 > APTC60DAM18CT (MICROSEMI POWER PRODUCTS GROUP) 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTC60DAM18CT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 143 A, 600 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 318K |
| 代理商： | APTC60DAM18CT |
APTC60DAM18CT
A
PT
C
60D
A
M
18C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
7 – 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
er
m
a
lIm
p
ed
an
ce
(°
C/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
50
100
150
200
00.5
1
1.5
22.5
3
3.5
VF Forward Voltage (V)
I F
Fo
rw
a
rd
C
u
rr
e
nt
(
A
)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
500
1000
1500
2000
200
300
400
500
600
700
800
VR Reverse Voltage (V)
I R
Re
ve
rs
eCu
rre
n
t(A)
Capacitance vs.Reverse Voltage
0
1000
2000
3000
4000
1
10
100
1000
VR Reverse Voltage
C
,C
apaci
ta
nce
(pF)
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTC60DDAM35T3 | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM35T3 | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM45CT1G | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70CT1G | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DAM18CTG | 功能描述:MOSFET N-CH 600V 143A SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DAM24CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DAM24T1G | 功能描述:MOSFET N-CH 600V 95A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DAM35T1G | 功能描述:MOSFET N-CH 600V 72A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DDAM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
发布紧急采购，3分钟左右您将得到回复。