- 您现在的位置：买卖IC网 > PDF目录166232 > AS5SS256K36ADQ-8.5/883C (AUSTIN SEMICONDUCTOR INC) 256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM PDF资料下载
参数资料
| 型号： | AS5SS256K36ADQ-8.5/883C |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| 中文描述： | 256K X 36 STANDARD SRAM, 8.5 ns, PQFP100 |
| 封装： | 14 X 20 MM, 1.40 MM HEIGHT, MS-026, TQFP-100 |
| 文件页数： | 11/16页 |
| 文件大小： | 391K |
| 代理商： | AS5SS256K36ADQ-8.5/883C |
SSRAM
AS5SS256K36 &
AS5SS256K36A
AS5SS256K36 &
AS5SS256K36A
Rev. 3.6 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
PIN DESCRIPTION (continued)
Pin Number
SYMBOL
TYPE
DESCRIPTION
84
ASDP\
Input
Synchronous Address Status Processor: This active LOW inputs
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address, independent of
the byte write enables and ADSC\, but dependent upon CE\, CE2 and
CE2\. ADSP\ is ignored if CE\ is HIGH. Power-down state is entered if
CE2 is LOW or CE2\ is HIGH.
31
MODE
Input
MODE: This inputs selects the burst sequence. A LOW on this pin
select "linear burst." NC or HIGH on this pin selects "interleaved burst."
Do not alter input state while device is operating.
64
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
(a) 52, 53, 56-59,
62, 63
(b) 68, 69, 72-75,
78, 79
(c) 2, 3, 6-9, 12,
13
(d) 18, 19, 22-25,
28, 29
DQa
DQb
DQc
DQd
Input/
Output
SRAM Data I/O's: Byte "a" is DQa pins; Byte "b" is DQb pins; Byte "c" is
DQc pins; Byte "d" is DQd pins. Input data must meet setup and hold
times around the rising edge of CLK.
51
80
1
30
NC/DQPa
NC/DQPb
NC/DQPc
NC/DQPd
NC/ I/O
Parity Data I/Os: Byte "a" parity is DQPa; Byte "b" parity is DQPb; Byte
"c" parity is DQPc; Byte "d" parity is DQPd.
15, 41, 65, 91
VDD
Supply
Power Supply: See DC Electrical Characteristics and Operating
Conditions for range.
4, 11, 20, 27, 54,
61, 70, 77
VDDQ
Supply
Isolated Output Buffer Supply: See DC Electrical Characteristics and
Operating Conditions for range.
5, 10, 14, 17, 21,
26, 40, 55, 60, 67,
71, 76, 90
Vss
Supply Ground: GND
38, 39
DNU
---
Do Not Use: These signals may either be unconnected or wired to GND
to improve package heat dissipation.
16, 66
NC
---
No Connect: These signals are not internally connected and may be
connected to GND to improve package heat dissipation.
42
43 (A version)
NF
---
No Function: These pins are internally connected to the die and have
the capacitance of an input pin. It is allowable to leave these pins
unconnected or driven by signals. On the 3 CE version, pin 42 is
reserved as an address upgrade pin for the 16Mb Synchronous Burst.
相关PDF资料 |
PDF描述 |
|---|---|
| AS6054 | 1000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AS7C1028-15JC | 256K X 4 STANDARD SRAM, 15 ns, PDSO28 |
| AS7C25512FT32A-85BIN | 512K X 32 STANDARD SRAM, 8.5 ns, PBGA165 |
| AS7C25512NTD32A-166TQI | 512K X 32 ZBT SRAM, 3.5 ns, PQFP100 |
| AS7C3256K18Z-3.5TQC | 256K X 18 STANDARD SRAM, 3.5 ns, PQFP100 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS5SS256K36DQ10 | 制造商:ASI 功能描述:NEW |
| AS5SS256K36DQ-10/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36DQ-10/IT | 制造商:Micross Components 功能描述:SSRAM-FT, 9.0MB - Trays |
| AS5SS256K36DQ-10/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
| AS5SS256K36DQ-8.5/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM |
发布紧急采购，3分钟左右您将得到回复。