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| 型号： | AT25DF321-S3U |
| 厂商： | Atmel |
| 文件页数： | 11/37页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 32MBIT 70MHZ 16SOIC |
| 标准包装： | 46 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 32M（16384 页 x 256 字节） |
| 速度： | 70MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
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AT25DF321
If the address specified by A23-A0 points to a memory location within a sector that is in the pro-
tected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle
aborts due to an incomplete address being sent or because a memory location within the region
to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Regis-
ter be polled rather than waiting the t BLKE time to determine if the device has finished erasing. At
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical “0” state.
The device also incorporates an intelligent erasing algorithm that can detect when a byte loca-
tion fails to erase properly. If an erase error arises, it will be indicated by the EPE bit in the
Status Register.
Figure 8-3.
CS
Block Erase
0
1
2
3
4
5
6
7
8
9
10 11 12
26 27 28 29 30 31
SCK
OPCODE
ADDRESS BITS A23-A0
SI
C
C
C
C
C
C
C
C
A
A
A
A
A
A
A
A
A
A
A
A
MSB
MSB
SO
HIGH-IMPEDANCE
8.3
Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command.
Before a Chip Erase command can be started, the Write Enable command must have been pre-
viously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in
device functionality when utilizing the two opcodes, so they can be used interchangeably. To
perform a Chip Erase, one of the two opcodes (60h or C7h) must be clocked into the device.
Since the entire memory array is to be erased, no address bytes need to be clocked into the
device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted,
the device will erase the entire memory array. The erasing of the device is internally self-timed
and should take place in a time of t CHPE .
The complete opcode must be clocked into the device before the CS pin is deasserted, and the
CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no
erase will be performed. In addition, if any sector of the memory array is in the protected state,
then the Chip Erase command will not be executed, and the device will return to the idle state
once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical “0” state if a sector is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Regis-
11
3669B–DFLASH–6/09
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| AT25DF321-SU | 功能描述:闪存 32 Megabit 2.7V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT25DF512C-MAHNGU-T | 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:带卷（TR） 零件状态:有效 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K（64K x 8） 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN（2x3） 标准包装:5,000 |
| AT25DF512C-MAHNGU-Y | 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:托盘 零件状态:停产 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K（64K x 8） 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN（2x3） 标准包装:490 |
| AT25DF512C-MAHN-T | 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K（64K x 8） 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN（2x3） 标准包装:1 |
| AT25DF512C-MAHN-Y | 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:托盘 零件状态:停产 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K（64K x 8） 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN（2x3） 标准包装:490 |
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