参数资料
型号: AT25DF321-S3U
厂商: Atmel
文件页数: 8/37页
文件大小: 0K
描述: IC FLASH 32MBIT 70MHZ 16SOIC
标准包装: 46
格式 - 存储器: 闪存
存储器类型: DataFLASH
存储容量: 32M(16384 页 x 256 字节)
速度: 70MHz
接口: SPI 3 线串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
7. Read Commands
7.1
Read Array
The Read Array command can be used to sequentially read a continuous stream of data from
the device by simply providing the SCK signal once the initial starting address has been speci-
fied. The device incorporates an internal address counter that automatically increments on every
clock cycle.
Two opcodes, 0Bh and 03h, can be used for the Read Array command. The use of each opcode
depends on the maximum SCK frequency that will be used to read data from the device. The
0Bh opcode can be used at any SCK frequency up to the maximum specified by f SCK . The 03h
opcode can be used for lower frequency read operations up to the maximum specified by f RDLF .
To perform the Read Array operation, the CS pin must first be asserted and the appropriate
opcode (0Bh or 03h) must be clocked into the device. After the opcode has been clocked in, the
three address bytes must be clocked in to specify the starting address location of the first byte to
read within the memory array. If the 0Bh opcode is used, then one don’t care byte must also be
clocked in after the three address bytes.
After the three address bytes (and the one don’t care byte if using opcode 0Bh) have been
clocked in, additional clock cycles will result in serial data being output on the SO pin. The data
is always output with the MSB of a byte first. When the last byte (3FFFFFh) of the memory array
has been read, the device will continue reading back at the beginning of the array (000000h). No
delays will be incurred when wrapping around from the end of the array to the beginning of the
array.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-imped-
ance state. The CS pin can be deasserted at any time and does not require that a full byte of
data be read.
Figure 7-1.
Read Array – 0Bh Opcode
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
SCK
OPCODE
ADDRESS BITS A23-A0
DON'T CARE
SI
0
0
0
0
1
0
1
1
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
X
X
MSB
MSB
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
MSB
MSB
Figure 7-2.
Read Array – 03h Opcode
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40
SCK
OPCODE
ADDRESS BITS A23-A0
SI
0
0
0
0
0
0
1
1
A
A
A
A
A
A
A
A
A
MSB
MSB
DATA BYTE 1
SO
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
MSB
MSB
8
AT25DF321
3669B–DFLASH–6/09
相关PDF资料
PDF描述
IR2111S IC DRIVER HALF-BRIDGE 8-SOIC
346-080-522-802 CARDEDGE 80POS DUAL .125 GREEN
AT24C512BN-SH-B IC EEPROM 512KBIT 1MHZ 8SOIC
MLG1005SR30J INDUCTOR MULTILAYER .30UH 0402
IR2110STR IC DRIVER HIGH/LOW SIDE 16-SOIC
相关代理商/技术参数
参数描述
AT25DF321-SU 功能描述:闪存 32 Megabit 2.7V RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT25DF512C-MAHNGU-T 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:带卷(TR) 零件状态:有效 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K(64K x 8) 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN(2x3) 标准包装:5,000
AT25DF512C-MAHNGU-Y 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:托盘 零件状态:停产 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K(64K x 8) 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN(2x3) 标准包装:490
AT25DF512C-MAHN-T 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:剪切带(CT) 零件状态:有效 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K(64K x 8) 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN(2x3) 标准包装:1
AT25DF512C-MAHN-Y 功能描述:IC FLASH 512KB 8UDFN 制造商:adesto technologies 系列:- 包装:托盘 零件状态:停产 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:512K(64K x 8) 速度:85MHz 接口:SPI 串行 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C(TC) 封装/外壳:8-UFDFN 裸露焊盘 供应商器件封装:8-UDFN(2x3) 标准包装:490