参数资料
型号: AT49BV6416T-70TI
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
中文描述: 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
文件页数: 2/30页
文件大小: 293K
代理商: AT49BV6416T-70TI
2
3451C–FLASH–2/05
AT49BV6416(T)
The VPP pin provides data protection and faster programming times. When the V
PP
input is
below 0.7V, the program and erase functions are inhibited. When V
PP
is at 1.65V or above, nor-
mal program and erase operations can be performed. With V
PP
at 10.0V, the program (dual-
word program command) operation is accelerated.
A six-byte command (Enter Single Pulse Program Mode) to remove the requirement of entering
the three-byte program sequence is offered to further improve programming time. After entering
the six-byte code, only single pulses on the write control lines are required for writing into the
device. This mode (Single Pulse Word Program) is exited by powering down the device, by tak-
ing the RESET pin to GND or by a high-to-low transition on the V
PP
input. Erase, Erase
Suspend/Resume, Program Suspend/Resume and Read Reset commands will not work while in
this mode; if entered they will result in data being programmed into the device. It is not recom-
mended that the six-byte code reside in the software of the final product but only exist in external
programming code.
2.
Pin Configurations
2.1
TSOP Top View (Type 1)
Pin Name
Pin Function
I/O0 - I/O15
Data Inputs/Outputs
A0 - A21
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
WP
Write Protect
VPP
Write Protection and Power Supply for Accelerated Program
Operations
VCCQ
Output Power Supply
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A21
A20
WE
RESET
VPP
WP
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
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