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参数资料
| 型号： | AT49BV6416T-70TI |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory |
| 中文描述： | 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48 |
| 文件页数： | 8/30页 |
| 文件大小： | 293K |
| 代理商： | AT49BV6416T-70TI |
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8
3451C–FLASH–2/05
AT49BV6416(T)
erase suspend and program suspend are the same, and the command sequence for the erase
resume and program resume are the same.
3.11
128-Bit Protection Register
The AT49BV6416(T) contains a 128-bit register that can be used for security purposes in sys-
tem design. The protection register is divided into two 64-bit blocks. The two blocks are
designated as block A and block B. The data in block A is non-changeable and is programmed
at the factory with a unique number. The data in block B is programmed by the user and can be
locked out such that data in the block cannot be reprogrammed. To program block B in the pro-
tection register, the four-bus cycle Program Protection Register command must be used as
shown in the
“Command Definition Table” on page 12
. To lock out block B, the four-bus cycle
lock protection register command must be used as shown in the Command Definition table. Data
bit D1 must be zero during the fourth bus cycle. All other data bits during the fourth bus cycle are
don’t cares. To determine whether block B is locked out, the status of Block B Protection com-
mand is given. If data bit D1 is zero, block B is locked. If data bit D1 is one, block B can be
reprogrammed. Please see the
“Protection Register Addressing Table” on page 13
for the
address locations in the protection register. To read the protection register, the Product ID Entry
command is given followed by a normal read operation from an address within the protection
register. After determining whether block B is protected or not or reading the protection register,
the Product ID Exit command must be given prior to performing any other operation.
3.12
Common Flash Interface (CFI)
Common Flash Interface (CFI) is a published, standardized data structure that may be read from
a Flash device. CFI allows system software to query the installed device to determine the config-
urations, various electrical and timing parameters, and functions supported by the device. CFI is
used to allow the system to learn how to interface to the Flash device most optimally. The two
primary benefits of using CFI are ease of upgrading and second source availability. The com-
mand to enter the CFI Query mode is a one-bus cycle command which requires writing data 98h
to address 55h. The CFI Query command can be written when the device is ready to read data
or can also be written when the part is in the product ID mode. Once in the CFI Query mode, the
system can read CFI data at the addresses given in the
“Common Flash Interface Definition
Table” on page 25
. To exit the CFI Query mode, the product ID exit command must be given.
3.13
Hardware Data Protection
Hardware features protect against inadvertent programs to the AT49BV6416(T) in the following
ways: (a) V
CC
sense: if V
CC
is below 1.8V (typical), the program function is inhibited. (b) V
CC
power-on delay: once V
CC
has reached the V
CC
sense level, the device will automatically time-
out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE low, CE high
or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a program cycle. (e) V
PP
is less than V
ILPP
.
3.14
Input Levels
While operating with a 2.7V to 3.6V power supply, the address inputs and control inputs (OE, CE
and WE) may be driven from 0 to 5.5V without adversely affecting the operation of the device.
The I/O lines can be driven from 0 to V
CCQ
+ 0.6V.
3.15
Output Levels
For the AT49BV6416(T), output high levels are equal to V
CCQ
- 0.1V (not V
CC
). For 2.7V to 3.6V
output levels, V
CCQ
must be tied to V
CC
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV6416T-70TI SL383 | 功能描述:IC FLASH 64MBIT 70NS 48TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49BV6416T-70TI-T | 功能描述:IC FLASH 64MBIT 70NS 48TSOP 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:64Mb （4M x 16） 写周期时间 - 字，页:15μs 访问时间:70ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商器件封装:48-TSOP 基本零件编号:AT49BV6416 标准包装:1,000 |
| AT49BV6416T-70TU | 功能描述:IC FLASH 64MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49BV642D | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:64-megabit (4M x 16) 3-volt Only Flash Memory |
| AT49BV642D-70TU | 功能描述:闪存 64M FLASH-64M 2.7V BTM BOOT RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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