参数资料
型号: AT49BV8011T
厂商: Atmel Corp.
英文描述: 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
中文描述: 8兆位3伏的快闪记忆体(800万位3V的闪速存储器)
文件页数: 10/18页
文件大小: 322K
代理商: AT49BV8011T
AT49BV/LV8011(T)
10
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
t
R
, t
F
< 5 ns
Output Test Load
Note:
1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol
Parameter
AT49LV8011(T)-90
AT49BV8011(T)-12
Units
Min
Max
Min
Max
t
ACC
Address to Output Delay
90
120
ns
t
CE
(1)
CE to Output Delay
90
120
ns
t
OE
(2)
OE to Output Delay
0
40
0
50
ns
t
DF
(3)(4)
CE or OE to Output Float
0
25
0
30
ns
t
OH
Output Hold from OE, CE or Address, whichever occurred first
0
0
ns
t
RO
RESET to Output Delay
800
800
ns
OUTPUT
VALID
OUTPUT
HIGH Z
RESET
OE
tOE
tCE
ADDRESS VALID
tDF
tOH
tACC
tRO
CE
ADDRESS
Pin Capacitance
f = 1 MHz, T = 25
°
C
(1)
Symbol
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
相关PDF资料
PDF描述
AT49LV8011 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
AT49LV8011T 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
AT49BV802A 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
相关代理商/技术参数
参数描述
AT49BV8011T-12CC 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
AT49BV8011T-12CI 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
AT49BV8011T-12TC 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
AT49BV8011T-12TI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8011T-90CC 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM