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参数资料
| 型号： | AT49BV8011T |
| 厂商： | Atmel Corp. |
| 英文描述： | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| 中文描述： | 8兆位3伏的快闪记忆体（800万位3V的闪速存储器） |
| 文件页数： | 4/18页 |
| 文件大小： | 322K |
| 代理商： | AT49BV8011T |
AT49BV/LV8011(T)
4
CHIP ERASE:
The entire device can be erased at one time
by using the 6-byte chip erase software code. After the chip
erase has been initiated, the device will internally time the
erase operation so that no external clocks are required.
The maximum time to erase the chip is t
EC
.
If the sector lockout has been enabled, the Chip Erase will
not erase the data in the sector that has been locked; it will
erase only the unprotected sectors. After the chip erase,
the device will return to the read or standby mode.
SECTOR ERASE:
As an alternative to a full chip erase, the
device is organized into 22 sectors that can be individually
erased. The Sector Erase command is a six bus cycle
operation. The sector address is latched on the falling WE
edge of the sixth cycle while the 30H Data Input command
is latched on the rising edge of WE. The sector erase starts
after the rising edge of WE of the sixth cycle. The erase
operation is internally controlled; it will automatically time to
completion. The maximum time to erase a section is t
SEC
.
When the sector programming lockout feature is not
enabled, the sector will erase (from the same Sector Erase
command). Once a sector has been protected, data in the
protected sectors cannot be changed unless the RESET
pin is taken to 12V ± 0.5V. An attempt to erase a sector
that has been protected will result in the operation terminat-
ing in 2 μs.
BYTE/WORD PROGRAMMING:
Once a memory block is
erased, it is programmed (to a logical
“
0
”
) on a byte-by-byte
or on a word-by-word basis. Programming is accomplished
via the internal device command register and is a four bus
cycle operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data
“
0
”
cannot be programmed back to a
“
1
”
; only erase operations
can convert
“
0
”
s to
“
1
”
s. Programming is completed after
the specified t
BP
cycle time. The DATA polling feature or
the toggle bit feature may be used to indicate the end of a
program cycle.
SECTOR PROGRAMMING LOCKOUT:
Each sector has a
programming lockout feature. This feature prevents pro-
gramming of data in the designated sectors once the
feature has been enabled. These sectors can contain
secure code that is used to bring up the system. Enabling
the lockout feature will allow the boot code to stay in the
device while data in the rest of the device is updated. This
feature does not have to be activated; any sector
’
s usage
as a write-protected region is optional to the user.
Once the feature is enabled, the data in the protected sec-
tors can no longer be erased or programmed when input
levels of 5.5V or less are used. Data in the remaining
sectors can still be changed through the regular program-
ming method. To activate the lockout feature, a series of
six program commands to specific addresses with specific
data must be performed. Please refer to the Command
Definitions table.
SECTOR LOCKOUT DETECTION:
A software method is
available to determine if programming of a sector is locked
out. When the device is in the software product identifica-
tion mode (see
“
Software Product Identification Entry/Exit
”
sections), a read from address location 00002H within a
sector will show if programming the sector is locked out. If
the data on I/O0 is low, the sector can be programmed; if
the data on I/O0 is high, the program lockout feature has
been enabled and the sector cannot be programmed. The
software product identification exit code should be used to
return to standard operation.
SECTOR PROGRAMMING LOCKOUT OVERRIDE:
The
user can override the sector programming lockout by taking
the RESET pin to 12V ± 0.5V. By doing this, protected data
can be altered through a chip erase, sector erase or
byte/word programming. When the RESET pin is brought
back to TTL levels, the sector programming lockout feature
is again active.
ERASE SUSPEND/ERASE RESUME:
The Erase Sus-
pend command allows the system to interrupt a sector
erase operation and then program or read data from a dif-
ferent sector within the same plane. Since this device has a
dual plane architecture, there is no need to use the erase
suspend feature while erasing a sector when you want to
read data from a sector in the other plane. After the Erase
Suspend command is given, the device requires a maxi-
mum time of 15 μs to suspend the erase operation. After
the erase operation has been suspended, the plane that
contains the suspended sector enters the erase-suspend-
read mode. The system can then read data or program
data to any other sector within the device. An address is
not required during the Erase Suspend command. During a
sector erase suspend, another sector cannot be erased. To
resume the sector erase operation, the system must write
the Erase Resume command. The Erase Resume com-
mand is a one bus cycle command that does require the
plane address, which is determined by A18 - A16. The
device also supports an erase suspend during a complete
chip erase. While the chip erase is suspended, the user
can read from any sector within the memory that is pro-
tected. The command sequence for a chip erase suspend
and a sector erase suspend are the same.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49LV8011 | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| AT49LV8011T | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| AT49BV802A | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802A-70CI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802A-70TI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV8011T-12CC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011T-12CI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011T-12TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011T-12TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory |
| AT49BV8011T-90CC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
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