参数资料
型号: AT49BV8011T
厂商: Atmel Corp.
英文描述: 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
中文描述: 8兆位3伏的快闪记忆体(800万位3V的闪速存储器)
文件页数: 12/18页
文件大小: 322K
代理商: AT49BV8011T
AT49BV/LV8011(T)
12
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See
note 3 under command definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
4. The t
WPH
time between the 5th and 6th bus cycle should be a minimum of 150 ns.
Program Cycle Characteristics
Symbol
Parameter
Min
Typ
Max
Units
t
BP
Byte/Word Programming Time
20
50
μ
s
t
AS
Address Setup Time
0
ns
t
AH
Address Hold Time
100
ns
t
DS
Data Setup Time
100
ns
t
DH
Data Hold Time
10
ns
t
WP
Write Pulse Width
100
ns
t
WPH
Write Pulse Width High
50
ns
t
EC
Chip Erase Cycle Time
10
seconds
t
SEC
Sector Erase Cycle Time
200
ms
OE
PROGRAM CYCLE
IDATA
ADDRESS
A0
55
5555
5555
AA
2AAA
t
BP
t
WPH
t
WP
CE
WE
A0 -A18
DATA
t
AS
t
AH
t
DH
t
DS
5555
AA
OE
(1)
AA
80
Note 3
55
55
5555
5555
Note 2
AA
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
2AAA
2AAA
t
WPH
t
WP
CE
WE
A0-A18
DATA
t
AS
t
AH
t
EC
t
DH
t
DS
5555
(4)
(4)
相关PDF资料
PDF描述
AT49LV8011 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
AT49LV8011T 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器)
AT49BV802A 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70CI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV802A-70TI 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
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