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参数资料
| 型号： | AUIRFR4105ZTR |
| 厂商： | International Rectifier |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 30A DPAK |
| 标准包装： | 2,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24.5 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 740pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
PD - 97544
AUTOMOTIVE GRADE
AUIRFR4105Z
AUIRFU4105Z
HEXFET ? Power MOSFET
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
G
D
S
V (BR)DSS
R DS(on) max.
I D
55V
24.5m ?
30A
●
Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET ? Power MOSFET utilizes the latest
D
G
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
S
G
D-Pak
AUIRFR4105Z
S
D
I-Pak
AUIRFU4105Z
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A ) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
30
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
E AS (tested )
I AR
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
21
120
48
0.32
± 20
29
46
See Fig.12a, 12b, 15, 16
A
W
W/°C
V
mJ
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
-55 to + 175
mJ
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300
10 lbf in (1.1N m)
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
3.12
R θ JA
R θ JA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
–––
50
110
°C/W
HEXFET ? is a registered trademark of International Rectifier.
* Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
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|---|---|
| AUIRFR4105ZTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4105ZTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 24.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFR4292 | 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK |
| AUIRFR4292TR | 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK |
| AUIRFR4292TRL | 制造商:International Rectifier 功能描述:"AUTOMOTIVE LOGIC LEVEL MOSFET 250V, 9.3A, 375 MOHM, 13 NC Q - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 250V 9.3A DPAK 制造商:International Rectifier 功能描述:Automotive Logic Le mOhm, 13 nC Qg, DPAK |
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