参数资料
型号: AUIRFR4105ZTR
厂商: International Rectifier
文件页数: 2/14页
文件大小: 0K
描述: MOSFET N-CH 55V 30A DPAK
标准包装: 2,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 30A
开态Rds(最大)@ Id, Vgs @ 25° C: 24.5 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 27nC @ 10V
输入电容 (Ciss) @ Vds: 740pF @ 25V
功率 - 最大: 48W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
AUIRFR/U4105Z
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.053
19
–––
24.5
V/°C Reference to 25°C, I D = 1mA
m ? V GS = 10V, I D = 18A
V GS(th)
gfs
I DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
2.0
16
–––
–––
–––
–––
4.0
–––
20
V
S
μA
V DS = V GS , I D = 250μA
V DS = 15V, I D = 18A
V DS = 55V, V GS = 0V
–––
–––
250
V DS = 55V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
200
-200
nA
V GS = 20V
V GS = -20V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q g
Total Gate Charge
–––
18
27
I D = 18A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
5.3
7.0
10
40
26
24
–––
–––
–––
–––
–––
–––
nC
ns
V DS = 44V
V GS = 10V
V DD = 28V
I D = 18A
R G = 24.5 ?
V GS = 10V
L D
Internal Drain Inductance
–––
4.5
–––
Between lead,
D
L S
C iss
C oss
C rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
7.5
740
140
74
–––
–––
–––
–––
nH
pF
6mm (0.25in.)
from package
and center of die contact
V GS = 0V
V DS = 25V
? = 1.0MHz
G
S
C oss
C oss
C oss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
450
110
180
–––
–––
–––
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 44V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 44V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
30
MOSFET symbol
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
120
integral reverse
(Body Diode)
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
14
1.3
29
21
V
ns
nC
T J = 25°C, I S = 18A, V GS = 0V
T J = 25°C, I F = 18A, V DD = 28V
di/dt = 100A/μs
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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