参数资料
型号: AUIRFR4105ZTR
厂商: International Rectifier
文件页数: 12/14页
文件大小: 0K
描述: MOSFET N-CH 55V 30A DPAK
标准包装: 2,000
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 55V
电流 - 连续漏极(Id) @ 25° C: 30A
开态Rds(最大)@ Id, Vgs @ 25° C: 24.5 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 27nC @ 10V
输入电容 (Ciss) @ Vds: 740pF @ 25V
功率 - 最大: 48W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
AUIRFR/U4105Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
? When mounted on 1" square PCB (FR-4 or G-10 Material) .
? C oss eff. is a fixed capacitance that gives the
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
? Repetitive rating; pulse width limited by ? Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
? Limited by T Jmax , starting T J = 25°C, L = 0.18mH ? This value determined from sample failure population,
R G = 25 ? , I AS = 18A, V GS =10V. Part not starting T J = 25°C, L = 0.18mH, R G = 25 ? , I AS = 18A, V GS =10V.
recommended for use above this value.
? Pulse width ≤ 1.0ms; duty cycle ≤ 2%. For recommended footprint and soldering techniques refer to
application note #AN-994.
same charging time as C oss while V DS is rising ? R θ is measured at TJ approximately 90°C.
from 0 to 80% V DSS .
12
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