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| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 25/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information please visit:
http://www.nxp.com
For sales offices addresses send e-mail to:
salesaddresses@nxp.com
NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands
R77/01/pp
25
Date of release:
2003 Sep 30
相关PDF资料 |
PDF描述 |
|---|---|
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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