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参数资料
| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 3/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
3
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
P
tot
drain-source voltage
drain current (DC)
total power dissipation
10
30
200
V
mA
mW
T
s
102
C; temperature at the
soldering point of the source lead
I
D
= 12 mA
amp. a: f = 1 MHz
amp. b: f = 1 MHz
f = 1 MHz
amp. a: f = 800 MHz
amp. b: f = 800 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
y
fs
C
ig1-ss
forward transfer admittance
input capacitance at gate 1
26
98
31
1.8
2.0
20
1.2
1.4
102
40
2.3
2.5
1.9
2.1
mS
pF
pF
fF
dB
dB
dB
V
C
rss
NF
reverse transfer capacitance
noise figure
X
mod
cross-modulation
100
105
dB
V
T
j
junction temperature
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
65
10
30
10
10
200
+150
150
V
mA
mA
mA
mW
C
C
T
s
102
C; note
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
240
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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