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参数资料
| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 7/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
7
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
GRAPHS FOR AMPLIFIER a
handbook, halfpage
ID
(mA)
0
2
0
5
10
15
0.4
0.8
1.2
1.6
VG1-S (V)
MGX432
(7)
(6)
(5)
(4)
(1)
(2)
(3)
Fig.5
Transfer characteristics; typical values;
amplifier a.
V
DS
(a) = 5 V; V
G1-S
(b) = V
DS
(b) = 0 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
0
10
0
8
16
2
VDS (V)
ID
(mA)
6
4
8
MGX433
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.6
Output characteristics; typical values;
amplifier a.
V
G2-S
= 4 V; V
G1-S
(b) = V
DS
(b) = 0 V; T
j
= 25
C.
(1) V
G1-S
(a) = 1.4 V.
(2) V
G1-S
(a) = 1.3 V.
(3) V
G1-S
(a) = 1.2 V.
(4) V
G1-S
(a) = 1.1 V.
(5) V
G1-S
(a) = 1 V.
(6) V
G1-S
(a) = 0.9 V.
(7) V
G1-S
(a) = 0.8 V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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