参数资料
型号: BF1216
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: Dual N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封装: PLASTIC, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN
文件页数: 2/17页
文件大小: 185K
代理商: BF1216
BF1216_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 April 2010
2 of 17
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
P
tot
total power dissipation
|
y
fs
|
forward transfer admittance
[1]
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 17
test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
3. Ordering information
Table 3.
Type number
Quick reference data for amplifier A and B
Conditions
DC
DC
T
sp
107
°
C
f = 100 MHz; T
j
= 25
°
C;
I
D
= 18 mA
f = 100 MHz
Min
-
-
Typ
-
-
-
27
Max
6
30
180
38
Unit
V
mA
mW
mS
[1]
-
23
C
iss(G1)
C
rss
NF
input capacitance at gate1
reverse transfer capacitance f = 100 MHz
noise figure
[2]
-
2.5
25
1.0
1.5
107
-
-
-
-
-
pF
fF
dB
dB
dB
μ
V
[2]
-
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 % at
40 dB AGC; f
w
= 50 MHz;
f
unw
= 60 MHz
-
-
Xmod
cross modulation
[3]
105
T
j
junction temperature
-
-
150
°
C
Discrete pinning
Description
gate1 (amplifier A)
gate2
gate1 (amplifier B)
drain (amplifier B)
source
drain (amplifier A)
Simplified outline
Graphic symbol
1
3
2
4
5
6
sym119
AMP A
DA
S
DB
G1A
G2
G1B
AMP B
Ordering information
Package
Name
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
BF1216
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