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参数资料
| 型号： | BF1216 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 9/17页 |
| 文件大小： | 185K |
| 代理商： | BF1216 |
BF1216_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 April 2010
9 of 17
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
V
DS
= 5 V; V
GG
= 5 V; nominal I
D
= 19 mA; R
G1
= 39 k
Ω
;
f = 50 MHz; T
j
= 25
°
C; see
Figure 17
.
V
DS
= 5 V; V
GG
= 5 V; nominal V
G2-S
= 4 V; R
G1
= 39 k
Ω
;
f
w
= 50 MHz; f
unw
= 60 MHz; nominal I
D
= 19 mA;
T
j
= 25
°
C; see
Figure 17
.
Fig 11. Unwanted voltage for 1 % cross modulation as
a function of gain reduction; typical values
Fig 10. Typical gain reduction as a function of the
AGC voltage; typical values
V
DS
= 5 V; V
GG
= 5 V; nominal V
G2-S
= 4 V; R
G1
= 39 k
Ω
; f
w
= 50 MHz; nominal I
D
= 19 mA; T
j
= 25
°
C; see
Figure 17
.
Fig 12. Typical drain current as a function of gain reduction; typical values
V
AGC
(V)
0
4
3
1
2
001aal592
30
20
40
10
0
gain
reduction
(dB)
50
gain reduction (dB)
0
50
40
20
30
10
001aal593
100
90
110
120
Xmod
(dB
μ
V)
80
gain reduction (dB)
0
50
40
20
30
10
001aal594
20
10
30
40
I
D
(mA)
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1216,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1216-24SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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