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参数资料
| 型号： | BF1216 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 3/17页 |
| 文件大小： | 185K |
| 代理商： | BF1216 |
BF1216_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 April 2010
3 of 17
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
4. Marking
Table 4.
Type number
BF1216
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per MOSFET
V
DS
drain-source voltage
I
D
drain current
I
G1
gate1 current
I
G2
gate2 current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the source lead.
Marking
Marking
M5p
M5t
M5w
Description
made in Hong Kong
made in Malaysia
made in China
Limiting values
Conditions
Min
Max
Unit
-
-
-
-
6
30
±
10
±
10
180
+150
150
V
mA
mA
mA
mW
°
C
°
C
DC
T
sp
≤
107
°
C
[1]
-
65
-
Fig 1.
Power derating curve
T
sp
(C)
0
200
150
50
100
001aac193
100
150
50
200
250
P
tot
(mW)
0
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相关代理商/技术参数 |
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|---|---|
| BF1216,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1216-24SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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