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参数资料
| 型号： | BF1216 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 4/17页 |
| 文件大小： | 185K |
| 代理商： | BF1216 |
BF1216_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 April 2010
4 of 17
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
6. Thermal characteristics
7. Static characteristics
[1]
R
G1
connects gate1 to V
GG
= 5 V; see
Figure 17
.
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
240
Unit
K/W
Table 7.
T
j
= 25
°
C.
Symbol
Per MOSFET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Parameter
Conditions
Min Typ Max
Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
μ
A
amplifier A
amplifier B
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
gate1-source breakdown voltage V
G2-S
= V
DS
= 0 V; I
G1-S
= 10 mA
V
(BR)G2-SS
gate2-source breakdown voltage V
G1-S
= V
DS
= 0 V; I
G2-S
= 10 mA
V
F(S-G1)
forward source-gate1 voltage
V
F(S-G2)
forward source-gate2 voltage
V
G1-S(th)
gate1-source threshold voltage
V
G2-S(th)
gate2-source threshold voltage
I
DS
drain-source current
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
μ
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
μ
A
V
G2-S
= 4 V
amplifier A; V
DS(A)
= 5 V; R
G1(A)
= 39 k
Ω
amplifier B; V
DS(B)
= 5 V; R
G1(B)
= 39 k
Ω
V
G2-S
= 0 V; V
DS(A)
= V
DS(B)
= 0 V
amplifier A; V
G1-S(A)
= 5 V
amplifier B; V
G1-S(B)
= 5 V
V
G2-S
= 4 V; V
DS(A)
= V
DS(B)
= 0 V;
V
G1-S(A)
= V
G1-S(B)
= 0 V
[1]
-
-
-
-
24
24
mA
mA
I
G1-S
gate1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1216,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1216-24SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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