参数资料
| 型号： | BR34L02FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SPD 2KB 8-TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 其它名称： | BR34L02FVT-WE2DKR |
BR34L02FV-W
Technical Note
● I/O Circuit
○ SDA Pin Pull-up Resistor
A pull-up resistor is required because SDA is an NMOS open drain. Determine the resistor value of (R PU ) by considering
the VIL and IL, and VOL-IOL characteristics. If a large R PU is chosen, the clock frequency needs to be slow. A smaller
R PU will result in a larger operating current.
○ Maximum R PU
The maximum of R PU can be determined by the following factors.
① The SDA rise time determined by R PU and the capacitance of the BUS line(CBUS) must be less than tR.
In addition, all other timings must be kept within the AC specifications.
② When the SDA BUS is High, the voltage A at the SDA BUS is determined from the total input leakage(IL) of all devices
connected to the BUS. R PU must be higher than the input High level of the microcontroller and the device, including a
noise margin 0.2V CC .
V CC -I L R PU -0.2 V CC ≧ VIH
Microcontroller
BR34L02FV-W
∴
R PU
≦
0.8V CC -V IH
IL
R PU
A
SDA PIN
Examples: When V CC =3V, IL=10μA, VIH=0.7 V CC
According to ②
IL
IL
R PU
≦
0.8×3-0.7×3
10×10 -6
≦ 300 ［ k ? ］
○ Minimum R PU
The minimum value of R PU is determined by following factors.
① Meets the condition that V OLMAX =0.4V, I OLMAX =3mA when the output is Low.
THE CAPACITANCE
OF BUS LINE (CBUS)
Fig.43 I/O Circuit
V CC -V OL
R PU
≦ I OL
∴
R PU ≧
V CC -V OL
I OL
② V OLMAX =0.4V must be lower than the input Low level of the microcontroller and the EEPROM
including the recommended noise margin of 0.1V CC .
V OLMAX ≦ VIL-0.1 V CC
R PU ≧
3-0.4
3×10 -3
≧ 867 ［ ? ］
and
V OL =0.4 ［ V ］
V IL =0.3 × 3
=0.9 ［ V ］
so that condition ② is met
○ SCL Pin Pull-up Resistor
When SCL is controlled by the CMOS output the pull-up resistor at SCL is not required.
However, should SCL be set to Hi-Z, connection of a pull-up resistor between SCL and V CC is recommended.
Several k ? are recommended for the pull-up resistor in order to drive the output port of the microcontroller.
● A0, A1, A2, WP Pin connections
○ Device Address Pin (A0, A1, A2) connections
The status of the device address pins is compared with the device address sent by the Master. One of the devices that is
connected to the identical BUS is selected. Pull up or down these pins or connect them to V CC or GND. Pins that are not
used as device address (N.C.Pins) may be High, Low, or Hi-Z.
WP Pin connection
The WP input allows or prohibits write operations. When WP is High, only Read is available and Write to all address is
prohibited. Both Read and Write are available when WP is Low.
In the event that the device is used as a ROM, it is recommended that the WP input be pulled up or connected to V CC .
When both READ and WRITE are operated, the WP input must be pulled down or connected to GND or controlled.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
12/17
2009.04 - Rev.A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34L02FVT-WSE2 | 制造商:ROHM Semiconductor 功能描述:IC EEPROM |
| BR34L02FV-W | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-W_09 | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 256X8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR34L02-W | 制造商:ROHM 制造商全称:Rohm 功能描述:2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module |
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