参数资料
| 型号： | BR34L02FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 8/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SPD 2KB 8-TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 其它名称： | BR34L02FVT-WE2DKR |
BR34L02FV-W
Technical Note
● Command
○ Write Cycle
During WRITE CYCLE operation data is written in the EEPROM. The Byte Write Cycle is used to write only one byte. In
the case of writing continuous data consisting of more than one byte, Page Write is used. The maximum bytes that can
be written at one time is 16 bytes.
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
WORD
ADDRESS
DATA
O
P
SDA
LINE
1 0 1 0 A2 A1 A0
WA
7
WA
0
D7
D0
R A
A
A
/
C
C
C
S
W
W K
K
Fig.34 Byte Write Cycle Timing
K
T
A
R
I
S
T
R
T
S LA V E
ADDRESS
T
E
W ORD
A D D R E S S (n )
D A TA (n)
D A TA (n + 1 5)
O
P
SDA
L IN E
1 0 1 0 A 2 A 1 A 0
WA
7
WA
0
D7
D0
D0
R A
/ C
W K
A
C
K
A
C
K
A
C
K
Fig.35 Page Write Cycle Timing
? With this command the data is programmed into the indicated word address.
? When the Master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory array.
This device is capable of sixteen-byte Page Write operations.
Once programming is started no commands are accepted for tWR (5ms max.).
If the Master transmits more than sixteen words prior to generating the STOP condition, the address counter will “roll
over” and the previously transmitted data will be overwritten.
When two or more byte of data are input, the four low order address bits are internally incremented by one after the
receipt of each word, while the four higher order bits of the address (WA7 ～ WA4) remain constant.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
8/17
2009.04 - Rev.A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34L02FVT-WSE2 | 制造商:ROHM Semiconductor 功能描述:IC EEPROM |
| BR34L02FV-W | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-W_09 | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 256X8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR34L02-W | 制造商:ROHM 制造商全称:Rohm 功能描述:2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module |
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