参数资料
| 型号： | BR34L02FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C SPD 2KB 8-TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 其它名称： | BR34L02FVT-WE2DKR |
BR34L02FV-W
Technical Note
The open drain interface is recommended for the SDA port in the I C BUS. However, if the Tri-state CMOS interface is
● Microcontroller connection
○ Concerning Rs
2
applied to SDA, insert a series resistor (Rs) between the SDA pin of the device and the pull up resistor R PU is
recommended, since it will serve to limit the current between the PMOS of the microcontroller, and the NMOS of the
EEPROM. Rs also protects the SDA pin from surges. Therefore, Rs is able to be used though open drain inout of the
SDA port.
ACK
R PU
R S
SCL
SDA
'H'OUTPUT OF
CONTROLLER
“L” OUTPUT OF EEPROM
CONTROLLER
EEPROM
The “H” output of controller and the “L” output of
EEPROM may cause current overload to SDA line.
Fig.44 I/O Circuit
Rs Maximum
The maximum value of Rs is determined by following factors.
① SDA rise time determined by R PU and the capacitance value of the BUS line (CBUS) of SDA must be less than tR. In
addition, the other timings must be within the timing conditions of the AC.
② When the output from SDA is Low, the voltage of the BUS at A
is determined by R PU, and Rs must be lower than
the input Low level of the microcontroller, including recommended noise margin (0.1V CC ).
V CC
R PU
A
(V CC -V OL )×R S
R PU +R S
+ V OL +0.1V CC ≦ V IL
R S
I OL
V OL
∴ R S ≦
V IL -V OL -0.1V CC
1.1V CC -V IL
×
R PU
BUS
CAPACITANCE
Examples : When V CC =3V V IL =0.3V CC V OL =0.4V R PU =20k ?
V IL
CONTROLLER
EEPROM
According to ② R S ≦
0.3×3-0.4-0.1×3
1.1×3-0.3×3
×
20×10 3
Fig.46 I/O Circuit
≦ 1.67 ［ k ? ］
Rs Minimum
The minimum value of Rs is determined by the current overload during BUS conflict.
Current overload may cause noises in the power line and instantaneous power down.
The following conditions must be met, where “I” is the maximum permissible current, which depends on the Vcc line
impedance as well as other factors. “I” current must be less than 10mA for EEPROM.
Vcc
R S
≦
I
R PU
R S
"L" OUTPUT
∴ R S ≧
Vcc
I
Examples: When V CC =3V, I=10mA
"H" OUTPUT
MAXIMUM
CURRENT
R S
≧
3
10×10 -3
CONTROLLER
EEPROM
≧ 300 ［ ? ］
Fig.47 I/O Circuit
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
13/17
2009.04 - Rev.A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR34L02FVT-WSE2 | 制造商:ROHM Semiconductor 功能描述:IC EEPROM |
| BR34L02FV-W | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-W_09 | 制造商:ROHM 制造商全称:Rohm 功能描述:DDR1/DDR2 For memory module) SPD Memory |
| BR34L02FV-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 256X8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR34L02-W | 制造商:ROHM 制造商全称:Rohm 功能描述:2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module |
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