参数资料
型号: BS270_D74Z
厂商: Fairchild Semiconductor
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH 60V 400MA TO-92
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 400mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 625mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 剪切带 (CT)
其它名称: BS270_D74ZFSCT
April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
Features
400mA, 60V. R DS(ON) = 2 ? @ V GS = 10V.
High density cell design for low R DS(ON) .
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
_____________ ___________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V DGR
V GSS
I D
P D
T J ,T STG
T L
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS < 1M ? )
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50μs)
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Derate Above 25 ° C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
BS270
60
60
± 20
± 40
400
2000
625
5
-55 to 150
300
Units
V
V
V
mA
mW
mW/°C
°C
°C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistacne, Junction-to-Ambient
200
°C/W
? 1997 Fairchild Semiconductor Corporation
BS270.SAM
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