参数资料
型号: BS270_D74Z
厂商: Fairchild Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: MOSFET N-CH 60V 400MA TO-92
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 400mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 625mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 剪切带 (CT)
其它名称: BS270_D74ZFSCT
Typical Electrical Characteristics (continued)
1.1
2
I D = 10μA
1
V GS = 0V
1.075
1.05
0.5
T J = 125°C
1.025
1
0.975
0.1
0.05
0.01
25°C
-55°C
0.005
0.95
0.925
-50
-25
0 25 50 75 100
T J , JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
V SD
0.6 0.8 1 1.2
, BODY DIODE FORWARD VOLTAGE (V)
1.4
60
Figure 7. Breakdown Voltage Variation
with Temperature.
Figure 8. Body Diode Forward Voltage Variation with
Current and Temperature.
10
40
C iss
8
I D = 5 0 0 m A
V DS = 25V
20
10
5
2
1
f = 1 MHz
V GS = 0V
C oss
C rss
6
4
2
0
1
2
3
5
10
20
30
50
0
0.4
0.8
1.2
1.6
2
V DS
, DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics .
V DD
t on
t off
t d(on)
t r
t d(off)
t f
V IN
R L
90%
90%
V GS
R GEN
G
D
DUT
V OUT
Output, Vout
10%
10%
90%
Inverted
Input, Vin
50%
50%
S
10%
Pulse   Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms .
BS270.SAM
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