参数资料
型号: BS270_D74Z
厂商: Fairchild Semiconductor
文件页数: 3/10页
文件大小: 0K
描述: MOSFET N-CH 60V 400MA TO-92
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 400mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 625mW
安装类型: 通孔
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 剪切带 (CT)
其它名称: BS270_D74ZFSCT
Typical Electrical Characteristics
2
3
V GS = 10V
9.0
8.0
7.0
2.5
V GS =4.0V
4.5
5.0
1.5
1
6.0
2
6 .0
7.0
5.0
1.5
8.0
9.0
10
0.5
4.0
1
0
0
1
2
3
4
3.0
5
0.5
0
0.4
0.8
1.2
1.6
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics .
2
V G S = 10V
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
3
V GS = 10V
1.75
I D = 500mA
2.5
1.5
1.25
1
0.75
2
1.5
1
0.5
T J = 125°C
25°C
-55°C
0.5
-50
-25
0
25
50
75
100
125
150
0
0
0.4
0.8
1.2
1.6
2
2
T J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.1
1.6
V DS = 10V
T J = -55°C
25°C
125°C
1.05
V DS = V GS
I D = 1 mA
1
1.2
0.95
0.8
0.9
0.4
0.85
0
0
2
4
6
8
10
0.8
-50
-25
0
25
50
75
100
125
150
V
GS
, GATE TO SOURCE VOLTAGE (V)
T J , JUNCTION TEMPERATURE (°C)
Figure 5. Transfer Characteristics .
Figure 6. Gate Threshold Variation with
Temperature .
BS270.SAM
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