参数资料
型号: BSS138LT1
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET N-CH 50V 200MA SOT-23
产品变化通告: Wire Change for SOT23 Pkg 26/May/2009
Product Obsolescence 21/Jan/2010
标准包装: 10
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 50V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 3.5 欧姆 @ 200mA,5V
Id 时的 Vgs(th)(最大): 1.5V @ 1mA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 225mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 剪切带 (CT)
其它名称: BSS138LT1OSCT
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
T J = 25 ° C
V GS = 3.5 V
V GS = 3.25 V
V GS = 3.0 V
0.9
0.8
0.7
0.6
V DS = 10 V
- 55 ° C
25 ° C
150 ° C
0.4
0.3
0.2
0.1
V GS = 2.75 V
V GS = 2.5 V
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
2.2
2
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS = 10 V
1.25
V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
I D = 1.0 mA
1.8
1.6
1.4
1.2
1
0.8
I D = 0.8 A
V GS = 4.5 V
I D = 0.5 A
1.125
1
0.875
0.6
- 55
-5
45
95
145
0.75
- 55
-30
-5
20
45
70
95
120
145
10
T J , JUNCTION TEMPERATURE ( ° C)
Figure 3. On ? Resistance Variation with
Temperature
V DS = 40 V
T J = 25 ° C
1.0E-5
T J , JUNCTION TEMPERATURE ( ° C)
Figure 4. Threshold Voltage Variation
with Temperature
8
6
4
2
I D = 200 mA
1.0E-6
1.0E-7
1.0E-8
150 ° C
125 ° C
0
0
500
1000
1500
2000
2500
3000
1.0E-9
0
5
10
15
20
25
30
35
40
45
50
Q T , TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
http://onsemi.com
3
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. IDSS
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