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参数资料
| 型号： | BU9829GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT SPI 9VCSP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 5MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.6 V ~ 3.6 V |
| 工作温度： | -30°C ~ 85°C |
| 封装/外壳： | 9-UFBGA，WLCSP |
| 供应商设备封装： | 9-VCSP50L1（1.6x1.6） |
| 包装： | 标准包装 |
| 其它名称： | BU9829GUL-WE2DKR |
BU9829GUL-W (16Kbit)
Datasheet
3.READ
The data stored in the memory are clocked out after “Read” instruction is received. After CSB goes low, the address need
to be sent following by Op.code of “Read”. The data at the address specified are clocked out from D7 to D0, which is start
at the falling edge of 23th clock. This device has the auto-increment feature that provides the whole data of the memory
array with one read command, outputs the next address data following the addressed 8bits of data by keeping SCK
clocking. When the highest address is reached, the address counter rolls over to the lowest address allowing the
continuous read cycle.
CSB
～～
～～
～～
～～
～～
SCK
0
1
2
3
4
5
6
7
8
14
23
24
～～
30
～～
～～
SI
0
0
0
0
0
0
1
1
*
* ～～
0
A10
～～
A1
A0
～～
～～
SO
Hi-Z
～～
～～
D7 D6
～～
D2
D1
D0
Figure 33. READ CYCLE TIMING
*=Don't care
4. WRITE
This “Write” command writes 8bits of data into the specified address. After CSB goes low, the address need to be sent
following by Op.code of “Write”. Between the rising edge of the 29th clock and it of the 30th clock, the rising edge of CSB
initiates high voltage cycle, which writes the data into non-volatile memory array, but the command is cancelled if CSB is
high except that period. It takes maximum 5ms in high voltage cycle (tE/W). The device does not receive any command
except for “Read Status Register” command during this high voltage cycle. This device is capable of writing the data of
maximum 32byte into memory array at the same time, which keep inputting two or more byte data with CSB “L” after
8bits of data input. For this Page Write commands, the eight higher order bits of address are set, the six low order
address bits are internally incremented by 5bits of data input. If more than 16 words, are transmitted the address counter
“roll over”, and the previous transmitted data is overwritten.
CSB
～～
～～
～～
～～
～～
SCK
0
1
2
3
4
5
6
7
8
14
～～
23
24
30
31
～～
～～
～～
SI
0
0
0
0
0
0
1
0
*
～～
0
A10
～～
A1
A0
D7
D6
～～
D2
D1
D0
SO
Hi-Z
～～
～～
～～
*=Don't care
Figure 34. WRITE CYCLE TIMING
5. RDSR (READ STATUS REGISTER)
The data stored in the status register is clocked out after “Read Status Register” instruction is received.
After CSB goes low, Op.colde of “Read Status Register” need to sent. The data stored in the status register is clocked out
of the device on the falling edge of 7th clock. Bit7, Bit6, Bit5 and Bit4 in the status register are read as 0.
This device has the auto-increment feature as well as “Read” that output the 8bits of the same data following it to keep
SCK clocking. It is possible to see ready and busy state by executing this command during tE/W. If more than 16 words,
are transmitted the address counter “roll over” and the previous transmitted data is overwritten.
CSB
SCK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SI
0
0
0
0
0
1
0
1
SO
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hi-Z
0
0
0
0
BP1 BP0 WEN R/B
Figure 35. READ STATUS REGISTER CYCLE TIMING
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
14/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU9831 | 制造商:ROHM 制造商全称:Rohm 功能描述:Non-volatile electronic potentiometer |
| BU9831F | 制造商:ROHM 制造商全称:Rohm 功能描述:Non-volatile electronic potentiometer |
| BU9832GUL-W | 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family SPI BUS |
| BU9832GUL-W_10 | 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family SPI BUS |
| BU9832GUL-WE2 | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-SPI 8Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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