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参数资料
| 型号： | BU9829GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 16/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16KBIT SPI 9VCSP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 5MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.6 V ~ 3.6 V |
| 工作温度： | -30°C ~ 85°C |
| 封装/外壳： | 9-UFBGA，WLCSP |
| 供应商设备封装： | 9-VCSP50L1（1.6x1.6） |
| 包装： | 标准包装 |
| 其它名称： | BU9829GUL-WE2DKR |
BU9829GUL-W (16Kbit)
● EEPROM soft ware
○ READ, VSET_READ, RDSR Command cancel
Cancel of these commands is possible by changing CSB pin to “HIGH” in all sections.
Datasheet
OPECODE
ADDRESS
DATA
OPECODE
DATA
8bit
8bit
8bit
8bit 8bit
Cancel is possible
Figure 39. READ, VSET_READ Cancel Timing
Cancel is possible
Figure 40. RDSR Cancel Timing
○ WRITE, PAGE_WRITE, VSET_WRITE, WRSR Command cancel
Cancel of these write command is possible by changing CSB pin to “HIGH” in opecode, address and data input sections
(section a to b), but it is impossible after data input section (section c to d), if Vcc1 is OFF during tE/W, please write again
because write data is not guaranteed in specified address, if SCK and CSB rise at the same time in section C, command
is instability. It is recommend to rise CSB in “SCK=L” section.
OPECODE
ADDRESS
DATA(n)
tE/W
SCK
8bit
a
8bit
8bit
b
d
SI
D7
D6
D5
D4
D3
D2
D1
D0
c
AN ENLARGEMENT
b
c
Figure 41. WRITE, PAGE_WRITE, VSET_WRITE READ VSET_READ Cancel Timing
OPECODE
8bit
a
DATA(n)
8bit
b
tE/W
8bit
d
AN ENLARGEMENT
SCK
SI
14
D1
15
D0
16
17
c
b
c
d
Figure 42. WRSR Cancel Timing
○ WREN, WRDI command cancel
Cancel of these commands is possible by changing CSB pin to “HIGH” of opecode to rising 8 clk, but it is impossible after
rising 8 clk. In the case, please send WREN or WRDI cancel timing command again.
OPECODE
8bit
AN ENLARGEMENT
7
8
9
a
b
a
b
Figure 43. WREN, WRDI Cancel Timing
● Data polling
If RDSR command is carried out daring tE/W, according to out put data ( R / B bit), to monitor READY/BUSY state is
possible. Because of this, it is possible to send next command earlier than regular programming time (tE/W MAX=5ms).
If R / B bit is “1”, EEPROM’s state is “BUSY”. If this becomes “0”, it is possible to send next command to change
EEPROM to “READY” state. Status register data read by this command in tE/W is not data written by WRSR command but
old data before. Status register data in each section is shown below.
During WRSR Command(tE/W ）
CSB
BUSY
READY
SCK
SI
SO
READ STATUS
REGISTOR
a=0Ch
WRITE STATUS
REGISTOR
b=(00h)
READ STATUS
REGISTOR
c=0Fh
READ STATUS
REGISTOR
d=0Ch
READ STATUS
REGISTOR
e=00h
Figure 44. Status register data in each section
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
16/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BU9831 | 制造商:ROHM 制造商全称:Rohm 功能描述:Non-volatile electronic potentiometer |
| BU9831F | 制造商:ROHM 制造商全称:Rohm 功能描述:Non-volatile electronic potentiometer |
| BU9832GUL-W | 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family SPI BUS |
| BU9832GUL-W_10 | 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family SPI BUS |
| BU9832GUL-WE2 | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-SPI 8Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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