参数资料
型号: BU9829GUL-WE2
厂商: Rohm Semiconductor
文件页数: 21/26页
文件大小: 0K
描述: IC EEPROM 16KBIT SPI 9VCSP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 5MHz
接口: SPI 串行
电源电压: 1.6 V ~ 3.6 V
工作温度: -30°C ~ 85°C
封装/外壳: 9-UFBGA,WLCSP
供应商设备封装: 9-VCSP50L1(1.6x1.6)
包装: 标准包装
其它名称: BU9829GUL-WE2DKR
BU9829GUL-W (16Kbit)
Datasheet
● LVCC circuit
LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite.
● Noise countermeasures
○ Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that moment, attach it as close to IC as
possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
IC
Capacitor 0.01 to 0.1μF
PRINT BASE
GND
Vcc
Capacitor 10 to 100μF
Figure 61. Vcc noise countermeasures example
● Recommendable application circuit
1. It is recommended to attach bypass condensers on
power line.
Vcc2(3.3V)
Vcc1(1.8V)
2. Be sure to make CSB pull up. At power on, mat cause
the abnormal function.
3. Please make LDOEN pull down.
4. If EEPROM malfunction occur by Hi-Z input of the
microcontroller part connected with SO, please make
SO pull up or pull down.
5. Please attach capacity at V OUT terminal. Outputs
R PU
BU9829GUL-W
Vcc1
CSB
SCK
SO
SI
Vcc2
R PU
overshoot change by output capacity. In actual use,
please evaluate and decide output capacity.
R PD
LDOEN
V OUT
GND
C L
(0.1μF)
C
(0.1μF)
C
R PD
Figure 62. Recommendable Application circuit
● Notes for use
? Absolute maximum ratings
We pay attention to quality control of this IC, but if there is special mode exceeded absolute maximum rating, please take
a physical safety measures. Because we can’t specify short mode and open made, etc.
? Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
? Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
? Common impedance
Please pay attention to V CC and GND wiring. For example, lower common impedance and to make wiring think, etc.
? GND electric potential
Set the voltage of GND terminal lowest at any action condition. And, please make pin except GND voltage of GND or
over.
? Test of set base
If low impedance pin connect with capacity at test of set base, please discharge each test progress to stress IC. Please
embroider earth for static electricity measures at structure progress, pay attention to carry and conservation. When set
base connect with test base at test progress, please connect and remove from power OFF.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
21/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001
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BU9832GUL-WE2 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-SPI 8Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8