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参数资料
| 型号： | BU9889GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 2WIRE VCSP50L1 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 带卷 (TR) |
BU9889GUL-W (8Kbit)
Datasheet
● Write Command
○ Write cycle
? Arbitrary data is written to EEPROM. When to write only 1 byte, byte write normally used, and when to write continuous
data of 2 bytes or more, simultaneous write is possible by page write cycle.
S
W
T
R
S
A
R
T
SLAVE
ADDRESS
I
T
E
WORD
ADDRESS
DATA
T
O
P
SDA
LINE
1 0 1 0 A2 P1 P0
WA
7
WA
0
D7
D0
R A
A
A
/
C
C
C
W K
K
K
Figure 31. Byte write cycle
S
W
T
A
R
I
S
T
R
SLAVE
T
WORD
O
T
ADDRESS
E
ADDRESS(n)
DATA(n)
DATA(n+15)
P
SDA
LINE
1
0 1
0 A2 P1 P0
WA
7
WA
0
D7
D0
D0
R A
A
A
A
/
C
C
C
C
W K
K
K
K
Figure 32. Page write cycle
? Data is written to the address designated by word address (n-th address).
? By issuing stop bit after 8bit data input, write to memory cell inside starts.
? When internal write is started, command is not accepted for tWR (5ms at maximum).
? By page write cycle, the following can be written in bulk: Up to 16 bytes
And when data of the maximum bytes or higher is sent, data from the first byte is overwritten.
(Refer to "Internal address increment " in Pape14.)
? As for page write command, after page select bit(PS) of slave address is designated arbitrarily, by continuing data input of
2 bytes or more, the address of insignificant 4 bits is incremented internally, and data up to 16 bytes can be written.
○ Notes on write cycle continuous input
At STOP (s top bit )
write starts.
S
T
A
R
T
SL AVE
ADDRESS
W
R
I
T
E
WORD
ADDRESS （ ｎ）
DATA(n)
DATA(n+15)
S
T
O
P
S
T
A
R
T
SDA
LINE
1 0 1 0 A2 P1 P0
WA
7
WA
0
D7
D0
D0
1 0 1 0
R A
/ C
W K
A
C
K
A
C
K
A
C
K
Next command
tW R(maximum ： 5ms)
Command is not accepted for this
Figure 33. Page write cycle
period.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
13/23
TSZ02201-0R2R0G100490-1-2
05.SEP.2012 Rev.001
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| BU9890GUL-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Silicon Monolithic Integrated Circuit |
| BU9890GUL-WE2 | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-2Wire 32Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BU9891GUL-W | 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family Microwire Bus |
| BU9891GUL-WE2 | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial 4Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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