参数资料
型号: BU9889GUL-WE2
厂商: Rohm Semiconductor
文件页数: 15/26页
文件大小: 0K
描述: IC EEPROM 8KBIT 2WIRE VCSP50L1
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 6-UFBGA,CSPBGA
供应商设备封装: VCSP50L1
包装: 带卷 (TR)
BU9889GUL-W (8Kbit)
Datasheet
● Read Command
○ Read cycle
Data of EEPROM is read. In read cycle, there are random read cycle and current read cycle.
Random read cycle is a command to read data by designating address, and is used generally.
Current read cycle is a command to read data of internal address register without designating address, and is used when
to verify just after write cycle. In both the read cycles, sequential read cycle is available, and the next address data can
be read in succession.
S
T
A
R
T
S LA VE
A DDRE SS
W
R
I
T
E
W O RD
ADD RES S(n)
S
T
A
R
T
SLA VE
A DDRE SS
R
E
A
D
DA TA (n)
S
T
O
P
It is necessary to input 'H'
to the last ACK.
SD A
LINE
1 0 1 0 A2 P1 P0
WA
7
WA
0
1 0 1 0 A 2 P1 P0
D7
D0
R A
/ C
W K
A
C
K
R A
/ C
W K
A
C
K
Figure 34. Random read cycle
S
T
A
R
T
S LAV E
AD DRES S
R
E
A
D
DA TA (n)
S
T
O
P
It is necessary to input 'H'
to the last ACK.
SDA
LINE
1 0 1 0 A 2 P 1 P 0
R A
/ C
W K
D7
D0
A
C
K
Figure 35. Current read cycle
S
T
A
R
T
SLAVE
ADDRESS
R
E
A
D
DATA(n)
DATA(n+x)
S
T
O
P
SDA
LINE
1 0 1 0 A2 P1 P0
R A
/ C
W K
D7
D0
A
C
K
A
C
K
D7
D0
A
C
K
Figure 36. Sequential read cycle (in the case of current read cycle)
? In random read cycle, data of designated word address can be read.
? When the command just before current read cycle is random read cycle, current read cycle (each including sequential
read cycle), data of incremented last read address (n)-th address, i.e., data of the (n+1)-th address is output.
? When ACK signal 'LOW' after D0 is detected, and stop condition is not sent from master (μ-COM) side, the next address
data can be read in succession.
? Read cycle is ended by stop condition where 'H' is input to ACK signal after D0 and SDA signal is started at SCL signal 'H'.
? When 'H' is not input to ACK signal after D0, sequential read gets in, and the next data is output.
Therefore, read command cycle cannot be ended. When to end read command cycle, be sure input stop condition to
input 'H' to ACK signal after D0, and to start SDA at SCL signal 'H'.
? Sequential read is ended by stop condition where 'H' is input to ACK signal after arbitrary D0 and SDA is started at SCL
signal 'H'.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
15/23
TSZ02201-0R2R0G100490-1-2
05.SEP.2012 Rev.001
相关PDF资料
PDF描述
BU9891GUL-WE2 IC EEPROM 4KBIT VCSP T/R
BU9897GUL-WE2 IC EEPROM SERIAL VCSP50L2
BU99901GUZ-WE2 IC EEPROM 32KBIT 2WIRE VCSP
BUK218-50DY,118 TOPFET DUAL SWITCH D2PAK
BVL121200003N BATTERY CHG UNIV 12VDC @ 1.2A
相关代理商/技术参数
参数描述
BU9890GUL-W 制造商:ROHM 制造商全称:Rohm 功能描述:Silicon Monolithic Integrated Circuit
BU9890GUL-WE2 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-2Wire 32Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BU9891GUL-W 制造商:ROHM 制造商全称:Rohm 功能描述:WL-CSP EEPROM family Microwire Bus
BU9891GUL-WE2 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial 4Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
BU9897GUL-W 制造商:ROHM 制造商全称:Rohm 功能描述:Silicon Monolithic Integrated Circuit