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参数资料
| 型号： | BU9889GUL-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/26页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 2WIRE VCSP50L1 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-UFBGA，CSPBGA |
| 供应商设备封装： | VCSP50L1 |
| 包装： | 带卷 (TR) |
BU9889GUL-W (8Kbit)
○ Notes on page write cycle
Maximum page number is 16 bytes for this IC.
Any bytes below these can be written.
The page write cycle write time is 5ms at maximum for 16byte bulk write.
It does not stand 5ms at maximum × 16byte = 80ms(Max.).
○ Internal address increment
Page write mode
Datasheet
WA7 -----
WA4
WA3
WA2
WA1
WA0
0 -----
0 -----
0 -----
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
Increment
0Eh
0
0
0
-----
-----
-----
0
0
0
1
1
0
1
1
0
1
1
0
0
1
0
Significant bit is fixed.
No digit up
For example, when it is started from address 0Eh,
therefore, increment is made as below,
0Eh → 0Fh → 00h → 01h ??? , which please note.
* 0Eh ??? 16 in hexadecimal, therefore, 00001110 becomes a binary number.
○ Write protect (WP) terminal
? Write protect (WP) function
When WP terminal is set Vcc (H level), data rewrite of all address is prohibited. When it is set GND (L level), data rewrite
of all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do not use it open.
At extremely low voltage at power ON/OFF, by setting the WP terminal 'H', mistake write can be prevented.
During tWR, set the WP terminal always to 'L'. If it is set 'H', write is forcibly terminated.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
14/23
TSZ02201-0R2R0G100490-1-2
05.SEP.2012 Rev.001
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