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参数资料
| 型号： | BUK9107-55ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装 |
| 文件页数： | 10/16页 |
| 文件大小： | 382K |
| 代理商： | BUK9107-55ATE |
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
3 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6.
Limiting values
[1]
Voltage is limited by clamping
[2]
Current is limited by power dissipation chip rating
[3]
Continuous current is limited by package.
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-40
V
VDGS
drain-gate voltage (DC)
IDG = 250 A
-40
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-
140
A
-75
A
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
560
A
Ptot
total power dissipation
-
272
W
IDG(CL)
drain-gate clamping current
tp = 5 ms; δ = 0.01
-
50
mA
IGS(CL)
gate-source clamping current
continuous
-
10
mA
tp = 5 ms; δ = 0.01
-
50
mA
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
140
A
-75
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
560
A
Clamping
EDS(CL)S
non-repetitive drain-source clamping
energy
unclamped inductive load; ID =75A;
VDS ≤ 40 V; VGS =5V; RGS =10k;
starting Tj =25 °C
-
1.4
J
Electrostatic discharge
Vesd
electrostatic discharge voltage; pins
1, 3, 5
Human Body Model; C = 100 pF;
R = 1.5 k
-6
kV
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