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参数资料
| 型号： | BUK9107-55ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装 |
| 文件页数： | 15/16页 |
| 文件大小： | 382K |
| 代理商： | BUK9107-55ATE |
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
8 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °C; tp = 300 sTj =25 °C; ID =50A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C; tp = 300s
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ne77
0
50
100
150
200
250
300
350
400
02468
10
VDS(V)
ID
(A)
2.2
2.6
3
3.4
3.8
4.2
4.6
VGS = 5 V
6
10
2.4
2.8
3.2
3.6
4
4.4
03ne79
0
5
10
15
20
25
24
68
10
VGS (V)
RDSon
(m
)
03ne78
6
8
10
12
14
16
0
50
100
150
200
250
300
ID (A)
RDSon
(m
)
VGS = 3 V
3.2
3.4
3.6
3.8
4
5
10
03ne89
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
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| BUK9107-55ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| BUK9207-30B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
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