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参数资料
型号： BUK9107-55ATE
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426
中文描述： 晶体管 | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装
文件页数： 13/16页
文件大小： 382K
代理商： BUK9107-55ATE
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
6 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DG
drain-gate zener breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C40
-
V
Tj = 55 °C40
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj =25 °C
-
0.1
100
A
Tj = 175 °C
-
250
A
V(BR)GSS
gate-source breakdown
voltage
IG = ±1 mA;
55 °C<Tj < 175 °C
12
15
-
V
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
5
1000
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =50A;
Figure 7 and 8
Tj =25 °C
-
5.8
7
m
Tj = 175 °C-
-
14
m
VGS = 4.5 V; ID =50A
-
6
7.7
m
VGS =10V; ID = 50 A
-
5.2
6.2
m
VF
temperature sense diode
forward voltage
IF = 250 A
648
658
668
mV
SF
temperature sense diode
temperature coefcient
IF = 250 A;
55 °C<Tj < 175 °C
1.4
1.54
1.68
mV/K
Vhys
temperature sense diode
forward voltage hysteresis
125
A<IF < 250 A
253250mV
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
5836
-
pF
Coss
output capacitance
-
958
-
pF
Crss
reverse transfer capacitance
-
595
-
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =1k
-3
-
s
tr
rise time
-
10
-
s
td(off)
turn-off delay time
-
17
-
s
tf
fall time
-
11
-
s
Ld
internal drain inductance
measured from upper edge
of drain mounting base to
centre of die
-
2.5
-
nH
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