- 您现在的位置：买卖IC网 > PDF目录223464 > BUK9107-55ATE TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 PDF资料下载
参数资料
| 型号： | BUK9107-55ATE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 |
| 中文描述： | 晶体管 | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装 |
| 文件页数： | 16/16页 |
| 文件大小： | 382K |
| 代理商： | BUK9107-55ATE |
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Product data
Rev. 03 — 22 January 2002
9 of 16
9397 750 08724
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03na17
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03na18
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ne81
0
20
40
60
80
100
120
140
0
20406080
100
ID (A)
gfs
(S)
03ne86
0
2000
4000
6000
8000
10000
12000
14000
16000
10-2
10-1
1
10
102
VDS(V)
C (pF)
Ciss
Coss
Crss
相关PDF资料 |
PDF描述 |
|---|---|
| BUK9240-100A | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-252AA |
| BUK9509-75A | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 75A I(D) | TO-220AB |
| BUK9523-75A | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 53A I(D) | TO-220AB |
| BUK952R8-30B | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB |
| BUK9535-100A | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 41A I(D) | TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BUK9107-55ATE /T3 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9107-55ATE,118 | 功能描述:MOSFET TRENCHPLUS MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9120-48TC | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes |
| BUK9206-40C,118 | 功能描述:MOSFET BUK9206-40C/SOT428/REEL13// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BUK9207-30B | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:TrenchMOS logic level FET |
发布紧急采购，3分钟左右您将得到回复。