参数资料
型号: BX80547RE2933CN
厂商: INTEL CORP
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 2930 MHz, MICROPROCESSOR, PBGA775
封装: FLIP CHIP, LGA-775
文件页数: 22/94页
文件大小: 2796K
代理商: BX80547RE2933CN
Datasheet
29
Electrical Specifications
.
Table 2-12. PWRGOOD and TAP Signal Group DC Specifications
Symbol
Parameter
Min
Max
Unit
Notes1, 2
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
All outputs are open drain.
V
HYS
Input Hysteresis
200
350
mV
3
3.
VHYS represents the amount of hysteresis, nominally centered about 0.5 * VTT, for all TAP inputs.
V
T
+
Input low to high
threshold voltage
0.5 * (VTT + VHYS_MIN)0.5 * (VTT + VHYS_MAX)V
4
4.
The VTT referred to in these specifications refers to instantaneous VTT.
V
T-
Input high to low
threshold voltage
0.5 * (VTT – VHYS_MAX)
0.5 * (VTT – VHYS_MIN)V
V
OH
Output High Voltage
N/A
VTT
V
I
OL
Output Low Current
45
mA
5
5.
The maximum output current is based on maximum current handling capability of the buffer and is not specified into the test
load.
I
LI
Input Leakage Current
± 200
A
6
6.
Leakage to VSS with land held at VTT.
I
LO
Output Leakage Current
± 200
A
R
ON
Buffer On Resistance
7
12
Ω
Table 2-13. VTTPWRGD DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes
V
IL
Input Low Voltage
0.3
V
IH
Input High Voltage
0.9
V
Table 2-14. BSEL [2:0] and VID[5:0] DC Specifications
Symbol
Parameter
Max
Unit
Notes1, 2
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
These parameters are not tested and are based on design simulations.
R
ON (BSEL)
Buffer On Resistance
60
Ω
R
ON (VID)
Buffer On Resistance
60
Ω
I
OL
Max Land Current
8
mA
I
LO
Output Leakage Current
200
A
3
3.
Leakage to VSS with land held at 2.5 V.
V
TOL
Voltage Tolerance
VTT (max)
V
Table 2-15. BOOTSELECT DC Specifications
Symbol
Parameter
Min
Typ
Max
Unit
Notes
V
IL
Input Low Voltage
0.24
V
1
NOTES:
1.
These parameters are not tested and are based on design simulations.
V
IH
Input High Voltage
0.96
V
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