参数资料
型号: CPH6350-TL-E
厂商: ON Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET P-CH 30V 6A CPH6
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 43 毫欧 @ 3A,10V
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 10V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-CPH
包装: 带卷 (TR)
Ordering number : ENA1529B
CPH6350
P-Channel Power MOSFET
–30V, –6A, 43m Ω , Single CPH6
Features
http://onsemi.com
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4V drive
Low ON-resistance
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±20
--6
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--24
1.6
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7018A-003
Device
CPH6350-TL-E
Package
CPH6
SC-74, SOT-26, SOT-457
Shipping
3,000pcs./
reel
memo
Pb-Free
6
2.9
5
4
0.15
CPH6350-TL-E
CPH6350-TL-W
CPH6350-TL-W
CPH6
SC-74, SOT-26, SOT-457
3,000pcs./
reel
Pb-Free
and
Halogen Free
0.05
Packing Type: TL
Marking
1
2
3
0.95
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6
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