参数资料
型号: CPH6350-TL-E
厂商: ON Semiconductor
文件页数: 6/6页
文件大小: 0K
描述: MOSFET P-CH 30V 6A CPH6
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 43 毫欧 @ 3A,10V
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 10V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: 6-CPH
包装: 带卷 (TR)
CPH6350
Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1529-6/6
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