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| 型号： | DMC3028LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 30V 5.5A SO8 |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A，5.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 472pF @ 15V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMC3028LSD-13DIDKR |
A Product Line of
Diodes Incorporated
DMC3028LSD
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Notes 3 & 5)
Symbol
V DSS
V GSS
N-Channel - Q1
30
± 20
7.1
P-Channel - Q2
-30
± 20
-7.4
Units
V
V
Continuous Drain Current
V GS = 10V
T A = 70°C (Notes 3 & 5)
(Notes 2 & 5)
I D
5.7
5.5
-5.9
-5.8
A
(Notes 2 & 6)
6.6
-6.8
Pulsed Drain Current
V GS = 10V
(Notes 4 & 5)
I DM
34
-36
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Notes 3 & 5)
(Notes 4 & 5)
I S
I SM
3.5
34
-3.5
-36
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Unit
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
P D
P D
P D
1.3
10
1.8
14
2.1
17
W
mW/ ° C
W
mW/ ° C
W
mW/ ° C
(Notes 2 & 5)
100
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
R θ JA
70
°C/W
(Notes 3 & 5)
60
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 5 & 7)
R θ JL
T J, T STG
51
-55 to +150
46
°C/W
°C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC3028LSD
Document Revision: 4
2 of 11
www.diodes.com
July 2009
? Diodes Incorporated
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