参数资料
型号: DMC4050SSD-13
厂商: Diodes Inc
文件页数: 7/11页
文件大小: 0K
描述: MOSFET N/P-CH 40V 4.2A SO8
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 4.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 1.8V @ 250µA
闸电荷(Qg) @ Vgs: 37.56nC @ 10V
输入电容 (Ciss) @ Vds: 1790.8pF @ 20V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: DMC4050SSD-13DKR
A Product Line of
Diodes Incorporated
DMC4050SSD
Electrical Characteristics P-CHANNEL
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
-
-
-
-
-
-
-1.0
±100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -40V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
V GS(th)
R DS (ON)
|Y fs |
V SD
-0.8
-
-
-
-1.3
28
30
16.6
-0.7
-1.8
45
60
-
-1.0
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -3A
V GS = -4.5V, I D = -3A
V DS = -5V, I D = -3A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
1643.17
179.13
127.82
6.43
33.66
5.54
7.30
6.85
14.72
53.65
30.86
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = -20V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -10V, V DS = -20V,
I D = -3A
V GS = -10V, V DS = -20V,
I D = -3A
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
30
25
20
25
20
V DS = -5V
T A = 85°C
T A = 25°C
T A = 150°C
T A = 125°C
T A = -55°C
15
10
5
15
10
5
0
0
0.5 1 1.5
2
0
0
1 2 3 4
5
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristic
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristic
DMC4050SSD
Document number: DS33310 Rev. 2 - 2
7 of 11
www.diodes.com
March 2011
? Diodes Incorporated
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