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| 型号： | DMG1012T-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 630MA SOT-523 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 400 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.74nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60.67pF @ 16V |
| 功率 - 最大： | 280mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG1012T-7DIDKR |
DMG1012T
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±6
Units
V
V
Continuous Drain Current (Note 4)
Pulsed Drain Current
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
I DM
0.63
0.45
6
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
0.28
452
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
100
±1.0
V
nA
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.5
-
1.0
V
V DS = V GS , I D = 250 μ A
0.3
0.4
V GS = 4.5V, I D = 600mA
Static Drain-Source On-Resistance
R DS (ON)
-
0.4
0.5
Ω
V GS = 2.5V, I D = 500mA
0.5
0.7
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
-
1.4
0.7
-
1.2
S
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
V DS =16V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
DMG1012T
Document number: DS31783 Rev. 3 - 2
2 of 6
www.diodes.com
January 2012
? Diodes Incorporated
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PDF描述 |
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| DMG1012UW-7 | MOSFET N-CH 20V 1A SOT323 |
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| DMG1013UW-7 | MOSFET P-CH 20V 820MA SOT323 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG1012UW | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W ESD 20V 1A SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W ESD, 20V, 1A, SOT323 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W ESD, 20V, 1A, SOT323; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:290mW; No. of Pins:3;RoHS Compliant: Yes |
| DMG1012UW-7 | 功能描述:MOSFET MOSFET N-CHANNEL SOT-323 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1013T | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMG1013T-7 | 功能描述:MOSFET MOSFET P-CHANNEL SOT-523 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG1013UW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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