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| 型号： | DMG4822SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET DL N-CH 30V 10A SO-8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 478.9pF @ 16V |
| 功率 - 最大： | 1.42W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMG4822SSD-13DIDKR |
DMG4822SSD
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Pulsed Drain Current (Note 6)
Avalanche Current (Note 7 & 8)
Repetitive Avalanche Energy L= 0.3mH (Note 7 & 8)
Steady
State
T A = +25°C
T A = +85°C
I D
I DM
I AR
E AR
10
6.6
60
1.68
12.8
A
A
A
mJ
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.42
88.4
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1
-
-
-
-
-
13.4
19.5
20
0.4
3
20
31
-
1.0
V
m ?
mS
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 8.5A
V GS = 4.5V, I D = 6A
V DS = 5V, I D = 8.5A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
478.9
96.7
61.4
1.1
5
10.5
1.8
1.6
2.9
7.9
14.6
3.1
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 16V, V GS = 0V,
f = 1MHz
V DS = 0V, V GS = 0V,f = 1MHz
V GS = 10V, V DS = 15V,
I D =8.5A
V DS = 15V, V GS = 10V,
R L = 1.8 ? , R G = 3 ? ,
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%
7. Repetitive rating, pulse width limited by junction temperature.
8. I AR and E AR rating are based on low frequency and duty cycles to keep T j =+25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
DMG4822SSD
Document number: DS35403 Rev. 2 - 2
2 of 7
www.diodes.com
February 2014
? Diodes Incorporated
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