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| 型号： | DMP2035UTS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 20V 6.04A 8TSSOP |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.04A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1610pF @ 10V |
| 功率 - 最大： | 890mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | DMP2035UTS-13DIDKR |
DMP2035UTS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
-
-
-
-
-
-
-1.0
±10
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
-0.4
-0.7
-1.0
V
V DS = V GS , I D = -250 μ A
23
35
V GS = -4.5V, I D = -4.0A
Static Drain-Source On-Resistance
R DS (ON)
-
30
45
m ?
V GS = -2.5V, I D = -4.0A
41
62
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
Diodes Forward Voltage
|Y fs |
V SD
-
-
14
-0.7
-
-1.0
S
V
V DS = -5V, I D = -4A
Is = -1A, V GS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R g
-
-
-
-
1610
157
145
9.45
-
-
-
-
pF
pF
pF
?
V DS = -10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
15.4
2.5
3.3
16.8
12.4
94.1
42.4
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
V GS = -4.5V, V DS = -10V,
I D = -4A
V DS = -10V, V GS = -4.5V,
R L = 10 ? , R G = 6.0 ? , I D = -1A
Notes:
5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
30
V GS = 8.0V
20
V DS = 5V
25
20
V GS = 4.5V
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
16
12
15
8
10
V GS = 1.5V
T A = 150°C
5
4
T A = 125°C
T A = 85°C
T A = 25°C
0
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
5
0
0
T A = -55°C
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMP2035UTS
Document number: DS31940 Rev. 3 - 2
2 of 6
www.diodes.com
January 2010
? Diodes Incorporated
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