参数资料
型号: DMP3008SFG-7
厂商: Diodes Inc
文件页数: 4/7页
文件大小: 0K
描述: MOSF P CH 30V POWERDI 3333-8
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 8.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 17 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 47nC @ 10V
输入电容 (Ciss) @ Vds: 2230pF @ 15V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-PowerWDFN
供应商设备封装: PowerDI3333-8
包装: 标准包装
其它名称: DMP3008SFG-7DIDKR
DMP3008SFG
30
30
25
V GS = 10V
25
V DS = -5.0V
20
15
10
V GS = 4.5V
V GS = 4.0V
V GS = 3.5V
V GS = 3.0V
20
15
10
5
5
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
T A = 25 ° C
0
0
V GS = 2.5V
0.5 1.0 1.5
2.0
0
1
T A = -55 ° C
2 3
4
0.05
-V DS , DRAIN -SOURCE VOLTAGE(V)
Fig. 4 Typical Output Characteristics
0.04
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristics
V GS = -4.5V
0.04
0.03
0.02
0.03
0.02
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
T A = 25 ° C
T A = -55 ° C
0.01
0.01
0
0
5 10 15 20 25
30
0
0
5 10 15 20 25
30
1.7
1.5
-I D , DRAIN SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.05
0.04
-I D , DRAIN SOURCE CURRENT (A)
Fig. 7 Typical On-Resistance vs.
Drain Current and Temperature
1.3
0.03
1.1
0.9
0.02
V GS = -4. 5V
I D = -5 A
0.7
0.01
V GS = -10V
I D = -10 A
0.5
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ° C)
Fig. 8 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated
Fig. 9 On-Resistance Variation with Temperature
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
4 of 7
www.diodes.com
May 2012
? Diodes Incorporated
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