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参数资料
| 型号： | DMP31D0UFB4-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 30V 540MA X2-DFN1006-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 76pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X2-DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMP31D0UFB4-7BDIDKR |
A Product Line of
Diodes Incorporated
DMP31D0UFB4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±8
Unit
V
V
Continuous Drain Current
Pulsed Drain Current (Note 5)
Steady
State
T A = 25°C (Note 5)
T A = 85°C (Note 5)
T A = 25°C (Note 4)
I D
I DM
-0.76
-0.55
-0.54
2
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 4)
(Note 5)
(Note 4)
(Note 5)
P D
R θ JA
0.46
0.92
271
136
W
°C/W
Operating and Storage Temperature Range
T J , T STG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
10
9
R θ JA(t) (t) * R θ JA
8
7
6
5
4
3
2
1
0
0.001
Single Pulse
R θ JA = 262 ° C/W
=r
T J - T A = P * R θ JA(t)
0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
R θ JA (t) = r(t) * R θ JA
R θ JA = 262°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001 0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance
DMP31D0UFB4
D atasheet number: DS35587 Rev. 1 - 2
2 of 7
www.diodes.com
January 2012
? Diodes Incorporated
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