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| 型号： | DMP31D0UFB4-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 30V 540MA X2-DFN1006-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 76pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X2-DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMP31D0UFB4-7BDIDKR |
A Product Line of
Diodes Incorporated
DMP31D0UFB4
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
-
-
-
-
-
-
-1
±3
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -30V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.5
-
-1.1
V
V DS = V GS , I D = -250 μ A
1
V GS = -4.5V, I D = -400mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
1.5
Ω
V GS = -2.5V, I D = -200mA
2
V GS = -1.8V, I D = -100mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
50
-
-
-
-
-1.2
mS
V
V DS = -3V, I D = -300mA
V GS = 0V, I S = -300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
76
9
6.43
166.9
0.9
1.5
0.1
0.2
4.98
5.85
35.71
16.64
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -4.5V, V DS = -15V,I D = -1A
V GS = -8V, V DS = -15V,
I D = -1A
V DD = -10V, R L = 10 Ω
V GS = -4.5V, R G = 6 Ω
Notes:
7. Short duration pulse test used to minimize self-heating effect.
Typical Electrical Characteristics
1.0
V GS = 4.5V
1.0
0.8
V GS = 2.5V
V GS = 1.8V
0.8
V DS = -5.0V
0.6
0.4
V GS = 1.5V
V GS = 1.2V
0.6
0.4
0.2
0.2
T A = 150 ° C
T A = 125 ° C
T A = 85 ° C
T A = 25 ° C
T A = -55 ° C
0
0
1 2 3 4
5
0
0
0.5 1.0 1.5
2.0
-V DS , DRAIN -SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristics
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristics
DMP31D0UFB4
D atasheet number: DS35587 Rev. 1 - 2
3 of 7
www.diodes.com
January 2012
? Diodes Incorporated
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