参数资料
型号: DS1870E-010+T&R
厂商: Maxim Integrated
文件页数: 20/28页
文件大小: 0K
描述: IC CNTRLR RF POWER AMP 16TSSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1,000
RF 型: 手机
封装/外壳: 16-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 16-TSSOP
包装: 带卷 (TR)
LDMOS RF Power-Amplifier Bias
Controller
Register Description
The register descriptions are organized by the register’s row address starting with the lower memory, then proceed-
ing through each lookup table in order. The format of the register description is shown below.
TABLE NAME
Name of Row
Name of Byte < Access >< Volatility >< Power-On/
Factor Default Values> Description
of the byte’s function
a) bit X bit X description
b) bit Y bit Y description
The Access value following each byte’s name defines the read/write access for the register. Possible values are
read-only (R), write-only (W), and read-write (R/W). The Volatility parameter defines if the memory is volatile (V) or
nonvolatile (NV). Some registers correspond to values measured or detected by the DS1870. These parameters are
read-only and listed as NA since their values are indeterminate. Power-On values are the default states of the
volatile register, and the Factory Default values are the values the EEPROM memory is programmed to by the
factory before they are shipped from Dallas Semiconductor.
LOWER MEMORY
User Row
User EE
<R/W><NV><00h> NV EEPROM user memory.
Threshold 0
Temp Hi Alarm <R/W><NV><0000h> Temperature measurements above this 2’s complement threshold set its
corresponding alarm bit. Measurements below this threshold clear the alarm bit.
V CC Hi Alarm <R/W><NV><0000h> Voltage measurements of the V CC input above this unsigned threshold
set its corresponding alarm bit. Measurements below this threshold clear the alarm bit.
VD Hi Alarm
ID1 Hi Alarm
<R/W><NV><0000h> Voltage measurements of the V D input above this unsigned threshold
set its corresponding alarm bit. Measurements below this threshold clear the alarm bit.
<R/W><NV><0000h> Voltage measurements of the I D1 input above this unsigned threshold set
its corresponding alarm bit. Measurements below this threshold clear the alarm bit.
Threshold 1
ID2 Hi Alarm <R/W><NV><0000h> Voltage measurements of the I D2 input above this unsigned threshold set
its corresponding alarm bit. Measurements below this threshold clear the alarm bit.
Threshold 2
Temp Lo Alarm <R/W><NV><0000h> Temperature measurements below this 2’s complement threshold set its
corresponding alarm bit. Measurements above this threshold clear the alarm bit.
V CC Lo Alarm <R/W><NV><0000h> Voltage measurements of the V CC below above this unsigned threshold
set its corresponding alarm bit. Measurements above this threshold clear the alarm bit.
VD Lo Alarm
<R/W><NV><0000h> Voltage measurements of the V D input below this unsigned threshold set
its corresponding alarm bit. Measurements above this threshold clear the alarm bit.
ID1 Lo Alarm <R/W><NV><0000h> Voltage measurements of the I D1 input below this unsigned threshold set
its corresponding alarm bit. Measurements above this threshold clear the alarm bit.
Threshold 3
ID1 Lo Alarm <R/W><NV><0000h> Voltage measurements of the I D2 input below this unsigned threshold set
its corresponding alarm bit. Measurements above this threshold clear the alarm bit.
20
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