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参数资料
| 型号： | DS1870E-010+T&R |
| 厂商： | Maxim Integrated |
| 文件页数： | 22/28页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR RF POWER AMP 16TSSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1,000 |
| RF 型： | 手机 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 带卷 (TR) |
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LDMOS RF Power-Amplifier Bias
Controller
PWE
PWE
TBL Sel
<W><V><FFFFh> Password Entry. Until the correct password is written to this location, the only
memory that can be written are addresses 78h to 7Fh. This includes the PWE and Table_Select
locations. All memory is readable regardless of the PWE value.
<R/W><V><00h> Table Select. The DS1870 contains four tables (1 to 5). Writing a (1 to 5) value
to this register grants access to the corresponding table.
TABLE 1 (CONFIGURATION)
Config
Password
LUT Sel
a) VD2
b) VD1
Fault Ena
<R/W><NV><FFFFh> The PWE value is compared against the value written to this location. All
EEPROM memory is write-protected when PWE does not match thisregister.
<R/W><NV><03h> Selects which inputs are used to control the lookup tables.
A one selects the V D input to control the drain LUT indexing for POT2 (Table 5). A zero
selects the I D2 input.
A one selects the V D input to control the drain LUT indexing for POT1 (Table 4). A zero
selects the I D1 input.
<R/W><NV><00h> Configures the maskable interrupt for the FAULT pin.
a) Temp Ena
b) V CC Ena
c) VD Ena
d) ID1 Ena
e) ID2 Ena
Temperature measurements, outside the threshold limits, are enabled to create an
active interrupt on the FAULT pin.
V CC measurements, outside the threshold limits, are enabled to create an active
interrupt on the FAULT pin.
V D measurements, outside the threshold limits, are enabled to create an active
interrupt on the FAULT pin.
I D1 measurements, outside the threshold limits, are enabled to create an active
interrupt on the FAULT pin.
I D2 measurements, outside the threshold limits, are enabled to create an active
interrupt on the FAULT pin.
Scale 0
V CC Scale
VD Scale
ID1 Scale
<R/W><NV><XXXX> Controls the scaling or gain of the V CC measurements. The V CC gain is
factory trimmed to 6.5535V FS.
<R/W><NV><XXXX> Controls the scaling or gain of the V D measurements. The V D gain is
factory trimmed to 2.500V FS.
<R/W><NV><XXXX> Controls the scaling or gain of the I D1 measurements. The I D1 gain is
factory trimmed to 0.5V FS.
Scale 1
ID2 Scale
<R/W><NV><XXXX> Controls the scaling or gain of the I D2 measurements. The I D2 gain is
factory trimmed to 0.5V FS.
Offset 0
V CC Offset
VD Offset
ID1 Offset
Offset 1
ID2 Offset
Temp Offset
LUT Index
<R/W><NV><0000h> Allows for offset control of V CC measurement
<R/W><NV><0000h> Allows for offset control of V D measurement.
<R/W><NV><0000h> Allows for offset control of I D1 measurement.
<R/W><NV><0000h> Allows for offset control of I D2 measurement.
<R/W><NV><0000h> Allows for offset control of temperature measurement.
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