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| 型号： | DS2045W-100# |
| 厂商： | Maxim Integrated |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 1MBIT 100NS 256BGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-BBGA |
| 供应商设备封装： | 256-BGA（27x27） |
| 包装： | 托盘 |
DS2045W 3.3V Single-Piece 1Mb
Nonvolatile SRAM
Recommended Reflow Temperature Profile
Applications Information
PROFILE FEATURE
Average ramp-up rate
(T L to T P )
Preheat
- Temperature min (T Smin )
- Temperature max (T Smax )
- Time (min to max) (ts)
T Smax to T L
- Ramp-up rate
Time maintained above:
- Temperature (T L )
- Time (t L )
Peak temperature (T P )
Time within 5 ° C of actual peak
temperature (T P )
Ramp-down rate
Time 25 ° C to peak temperature
Sn-Pb EUTECTIC
ASSEMBLY
3 ° C/second max
100 ° C
150 ° C
60 to 120 seconds
183 ° C
60 to 150 seconds
225 +0/-5 ° C
10 to 30 seconds
6 ° C/second max
6 minutes max
Power-Supply Decoupling
To achieve the best results when using the DS2045W,
decouple the power supply with a 0.1μF capacitor. Use
a high-quality, ceramic surface-mount capacitor if pos-
sible. Surface-mount components minimize lead induc-
tance, which improves performance, while ceramic
capacitors have adequately high frequency response
for decoupling applications.
Using the Open-Drain RST Output
The RST output is open drain, and therefore requires a
pullup resistor to realize a high logic output level. Pullup
resistor values between 1k ? and 10k ? are typical.
Battery Charging/Lifetime
The DS2045W charges an ML battery to maximum
capacity in approximately 96 hours of operation when
V CC is greater than V TP . Once the battery is charged,
its lifetime depends primarily on the V CC duty cycle.
The DS2045W can maintain data from a single, initial
charge for up to 3 years. Once recharged, this deep-
discharge cycle can be repeated up to 20 times, pro-
ducing a worst-case service life of 60 years. More
Note: All temperatures refer to top side of the package, mea-
sured on the package body surface.
typical duty cycles are of shorter duration, enabling the
DS2045W to be charged hundreds of times, therefore
extending the service life well beyond 60 years.
Recommended Cleaning Procedures
The DS2045W may be cleaned using aqueous-based
cleaning solutions. No special precautions are needed
when cleaning boards containing a DS2045W module.
Removal of the topside label violates the environmen-
tal integrity of the package and voids the warranty of
the product.
____________________________________________________________________
11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2045W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Single-Piece 1Mb Nonvolatile SRAM |
| DS2045Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2045Y20# | 制造商:Maxim Integrated Products 功能描述: |
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